2sb824 / 2SD1060 no.686-1/5 applications suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. features low collector-to-emitter saturation voltage : v ce (sat)= (--)0.4v max / i c = (--)3a, i b = (--)0.3a. specifications ( ) : 2sb824 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)5 a collector current (pulse) i cp (--)9 a collector dissipation p c 1.75 w tc=25 c30w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0a (--)0.1 ma emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 ma continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en686j 82207fa ti im tc-00000844 / 913003tn(kt)/91098ha(kt)/d251mh/4017ki specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ? s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ? s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2sb824 / 2SD1060 pnp / npn epitaxial planar silicon transistors 50v / 5a switching applications
2sb824 / 2SD1060 no.686-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1v ce =(--)2v, i c =(--)1a 70* 280* h fe 2v ce =(--)2v, i c =(--)3a 30 gain-bandwidth product f t v ce =(--)5v, i c =(--)1a 30 mhz output capacitance cob v cb =(--)10v, f=1mhz (160)100 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)3a, i b =(--)0.3a (--)0.4 v collector-to-base breakdown voltage v (br)cbo i c =(--)1ma, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)1ma, i c =0a (--)6 v turn-on time t on see specified test circuit. 0.1 s storage time t stg see specified test circuit. (0.7)1.4 s fall time t f see specified test circuit. 0.2 s * : the 2sb824 / 2SD1060 are classified by 1a h fe as follows : rank q r s h fe 70 to 140 100 to 200 140 to 280 package dimensions switching time test circuit unit : mm (typ) 7507-001 10.2 5.1 4.5 1.3 15.1 14.0 2.7 6.3 3.6 18.0 (5.6) 2.7 1.2 0.8 0.4 2.55 2.55 123 1 : base 2 : collector 3 : emitter sanyo : to-220 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a -- 1 0 -- 8 -- 6 -- 4 -- 2 2sb824 2SD1060 i b =0 ma 50ma 100ma 150ma 250ma 300ma 350ma 400ma 500ma 200ma itr08436 0 0 --0.8 --2.4 -- 2 . 0 --0.4 --1.2 --1.6 10 8 6 4 2 0 0 0.8 2.4 2.0 0.4 1.2 1.6 --50ma --500ma --450ma --400ma --350ma --300ma --250ma --200ma --150ma --100ma i b =0ma itr08435 450ma pw=20 s t r , t f 15ns v r 100 r b 1 v cc =20v v be = --5v + + 50 input output r l 10 1 f 1 f i b1 i b2 i c =10i b1 = --10i b2 =2a for pnp, the polarity is reversed.
2sb824 / 2SD1060 no.686-3/5 h fe -- i c collector current, i c -- a dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a h fe -- i c collector current, i c -- a dc current gain, h fe v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v --1.0 v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v ta=80 c 25 c --20 c 2SD1060 i c / i b =10 --10 --0.1 23 5 23 5 23 5 2 --10 5 3 2 5 3 2 --1.0 5 3 2 --0.1 --0.01 10 0.1 23 5 23 5 23 5 2 1.0 10 5 3 2 5 3 2 1.0 5 3 2 0.1 0.01 --10 --0.1 23 5 23 5 23 5 2 --1.0 --10 5 3 2 5 3 2 --1.0 5 3 2 --0.1 --0.01 10 0.1 23 5 23 5 23 5 2 1.0 10 5 3 2 5 3 2 1.0 5 3 2 0.1 0.01 ta=80 c 25 c --20 c itr08441 itr08442 2sb824 i c / i b =10 ta=80 c 25 c --20 c 2SD1060 i c / i b =20 ta=80 c 25 c -- 2 0 c itr08443 itr08444 2sb824 i c / i b =20 ta=80 c --20 c 2sb824 v ce = --2v itr08439 100 7 1000 7 5 3 2 5 3 2 10 100 7 1000 7 5 3 2 5 3 2 10 0.01 3 25 0.1 3 25 1.0 3 22 5 10 --1.0 --0.01 3 25 3 25 3 2 --10 2 5 --0.1 ta=80 c --20 c 25 c 2SD1060 v ce =2v itr08440 25 c 2sb824 v ce = --2v ta=80 c 25 c --20 c --10 -- 9 -- 5 -- 4 -- 8 -- 7 -- 6 -- 3 -- 2 -- 1 0 10 8 5 2 1 9 6 7 3 4 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.2 --1.0 itr08437 2SD1060 v ce =2v ta=80 c 25 c -- 2 0 c 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 itr08438
2sb824 / 2SD1060 no.686-4/5 p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w p c -- tc case temperature, tc -- c collector dissipation, p c -- w 0 35 30 25 20 15 10 5 20 060 40 80 100 140 120 160 itr08449 0 2.0 1.75 1.0 1.2 1.4 1.6 1.8 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 it12873 no heat sink 2sb824 / 2SD1060 2sb824 / 2SD1060 a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v ce (sat) -- v v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v ce (sat) -- v --1.0 5 7 2 3 5 7 2 3 --10 2 --0.1 --10 --1.0 25 3 57 7 2 5 37 --100 i cp = --9a 10ms 10ms 100ms dc operation 100ms 1ms i c = --5a itr08447 1.0 5 7 2 3 5 7 2 3 10 2 0.1 10 1.0 25 3 57 7 2 5 37 100 dc operation 2sb824 i cp =9a 1ms i c =5a itr08448 2SD1060 --10 --0.1 23 5 23 5 23 5 2 --1.0 10 0.1 23 5 23 5 23 5 2 1.0 --1.0 --10 7 5 3 2 2 7 5 3 1.0 10 7 5 3 2 2 7 5 3 2sb824 i c / i b =10 i c / i b =20 i c / i b =10 i c / i b =20 itr08445 itr08446 2SD1060 1ms to 100ms : single pulse 1ms to 100ms : single pulse
2sb824 / 2SD1060 no.686-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of august, 2007. specifications and information herein are subject to change without notice. ps
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